Effect of Additives on Diffusion Processes in UO2

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Effect of Additives on Diffusion Processes in UO2

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Publication Other
Title Effect of Additives on Diffusion Processes in UO2
Author(s) Massih, Ali ; Jernkvist, Lars Olof
Date 2013
English abstract
Metal oxides added to UO2 to improve material performance during irradiation, or as burnable absorbers to control reactor energy output, affect point defect processes in UO2. The oxygen and uranium Frenkel pairs and the uranium-oxygen Schottky defects regulate the O/U ratio, which in turn influence diffusion processes in UO2. The dopants considered here include Cr2O3 and Gd2O3. Using the law of mass action to the Frenkel and Schottky defects in doped UO2, we relate O/U to the dopant concentration. Also, we find relationships between the oxygen and uranium vacancies and dopant concentration. The uranium self-diffusion coefficient is proportional to concentration of uranium vacancies in the hyper-stoichiometric region, whereas to that of uranium interstitials in hypo-stoichiometric region. We relate this to the creep rate and diffusion coefficient of fission gases in UO2. We use the model to evaluate creep rate and gas diffusivity in doped UO2 in light of experimental data.
Language eng (iso)
Subject(s) Sciences
Research Subject Categories::NATURAL SCIENCES
Note MS&T13: Materials Science & Technology 2013, 27-31 October, Montreal, QC, Canada
Handle http://hdl.handle.net/2043/16477 (link to this page)
Link http://www.matscitech.org/mst2013/ (external link to related web page)

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