Chemical and Topographic Analysis of Eight commercially Available Dental Implants

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Chemical and Topographic Analysis of Eight commercially Available Dental Implants

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Publication Article, peer reviewed scientific
Title Chemical and Topographic Analysis of Eight commercially Available Dental Implants
Author(s) Peck, Mogammad Thabit ; Chrcanovic, Bruno
Date 2016
English abstract
Background: Surface characterization of dental implants allows us to better understand the effects of the implant on the host biological response. In this study, we analyzed and compared these characteristics among implants commercially available in South Africa. Materials and methods: Eight implants from different manufacturers were chosen for analysis (Touareg, ICE, (R)Evolutions, Uniti, AnyRidge, MIS, Ivory-QSI, Southern), using scanning electron microscopy (SEM), interferometry, and energy dispersive X-ray spectroscopy to study the surface chemical composition and morphology. Results: The results indicate that variations in manufacturer processes result in implant surfaces that are distinctly different from one another. Most implants presented a moderately rough surface with sandblasted-only implant surfaces having a lower mean value of Sa when compared with sandblasted and acid-etched surfaces. Carbon contamination was detected on all the implants and that of aluminum on five implant surfaces. Ca and P were detected on the surface of Touareg implants, indicating the manufacturer's attempt to enhance osseointegration. Conclusion: The surface of the implants showed a range of chemical, physical properties, and surface topographies.
DOI http://dx.doi.org/10.5005/jp-journals-10024-1855 (link to publisher's fulltext.)
Publisher Jaypee Brothers Medical Publishers
Host/Issue The Journal of Contemporary Dental Practice;5
Volume 17
ISSN 1526-3711
Pages 354-360
Language eng (iso)
Subject(s) Chemical analysis
Implant surface
Roughness
Titanium
Medicine
Research Subject Categories::ODONTOLOGY
Handle http://hdl.handle.net/2043/21270 (link to this page)

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