Threshold stoichiometry for beam induced nitrogen depletion of SiN

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Threshold stoichiometry for beam induced nitrogen depletion of SiN

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Publication Article, peer reviewed scientific
Title Threshold stoichiometry for beam induced nitrogen depletion of SiN
Author(s) Timmers, H ; Sarwe, E-L ; Whitlow, Harry J ; Uribasterra, J ; Elliman, RG ; Weijers, TDM
Date 2002
English abstract
Measurements of the stoichiometry of silicon nitride films as a function of the number of incident ions using heavy ion elastic recoil detection (ERD) show that beam-induced nitrogen depletion depends on the projectile species, the beam energy, and the initial stoichiometry. A threshold stoichiometry exists in the range 1.3>N/Si1, below which the films are stable against nitrogen depletion. Above this threshold, depletion is essentially linear with incident fluence. The depletion rate correlates non-linearly with the electronic energy loss of the projectile ion in the film. Sufficiently long exposure of nitrogen-rich films renders the mechanism, which prevents depletion of nitrogen-poor films, ineffective. Compromising depth-resolution, nitrogen depletion from SiN films during ERD analysis can be reduced significantly by using projectile beams with low atomic numbers.
DOI http://dx.doi.org/10.1016/S0168-583X(01)01217-4 (link to publisher's fulltext)
Host/Issue Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1-4
Volume 190
ISSN 0168-583X
Pages 428-432
Language eng (iso)
Subject(s) Ion beam analysis
Nitrogen depletion
Elastic recoil detection
Handle http://hdl.handle.net/2043/524 (link to this page)

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