Measurements of Si ion stopping in amorphous silicon

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Measurements of Si ion stopping in amorphous silicon

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Publication Article, peer reviewed scientific
Title Measurements of Si ion stopping in amorphous silicon
Author(s) Whitlow, Harry J ; O'Connor, DJ ; Zhang, Y ; Weijers, T ; Elliman, RG ; Timmers, H
Date 2003
English abstract
The stopping of 28Si ions in polycrystalline Si foils has been measured over the energy range 0.1-3.3 MeV per nucleon. For the low energy interval (0.1-0.5 MeV per nucleon), time of flight-energy elastic recoil detection analysis method was used, whilst for the high energy region (1.2-3.3 MeV per nucleon) the energy loss in the same foil was measured using a Si p-i-n diode with the 28Si ions directly incident on the foil following acceleration. Below the stopping maximum the results are in good agreement with literature data based on Doppler shift measurements of short nuclear lifetimes but are about 20% smaller than the SRIM prediction. Above the stopping maximum the data are in agreement with SRIM within the limits of statistical uncertainty.
DOI (link to publisher's fulltext)
Host/Issue Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1-4
Volume 190
ISSN 0168-583X
Pages 84-88
Language eng (iso)
Subject(s) Silicon
Time of flight
Energy loss
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