Band gap modification in GaInAs/InP quantum well structures using switched ion channelling lithography

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Band gap modification in GaInAs/InP quantum well structures using switched ion channelling lithography

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Publication Article, peer reviewed scientific
Title Band gap modification in GaInAs/InP quantum well structures using switched ion channelling lithography
Author(s) Winzell, Thomas ; Maximov, Ivan ; Landin, Lars ; Zhang, Yanwen ; Gustafsson, Anders ; Samuelsson, Lars ; Whitlow, Harry J
Date 2003
English abstract
A novel technique has been developed to lithographically modify GaInAs/InP quantum well (QW) structures. 10 MeV 69Ga3+ ions are implanted into a 40 nm InP/ 9 nm GaInAs/InP (100) substrate along the [100] direction. A 50 nm thick Au mask switches a fraction of the aligned ions into dechannelling trajectories. The dechannelled ions enhance the ion beam induced intermixing of the GaInAs QW with the surrounding InP cladding layers. Low-temperature photoluminescence (PL) was used to study bandgap modification of the GaInAs QW after implantation for a fluence range of 4×1011-4×1013 69Ga3+ ions cm-2. A larger bandgap energy shift was observed with PL under the Au mask (28 meV) compared to areas not covered with the Au mask (12 meV). Furthermore, the integrated PL intensity was found to be lower in the masked areas, which is consistent with a greater defect concentration in the regions under the Au mask.
DOI http://dx.doi.org/10.1088/0268-1242/16/11/301 (link to publisher's fulltext)
Publisher IOP Publishing
Host/Issue Semiconductor science and technology;16
ISSN 1361-6641
Language eng (iso)
Handle http://hdl.handle.net/2043/546 (link to this page)

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