Scanning probe microscopy characterisation of masked low energy implanted nanometer structures

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Scanning probe microscopy characterisation of masked low energy implanted nanometer structures

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Publication Article, peer reviewed scientific
Title Scanning probe microscopy characterisation of masked low energy implanted nanometer structures
Author(s) Winzell, T ; Whitlow, Harry J ; Montelius, L ; Graczyk, M ; Sarwe, E-L ; Maximov, I ; Anand, S
Date 2001
English abstract
In order to fabricate and characterise nanometer structures, silicon wafers were implanted with masks ranging from several m down to 200 nm in lateral dimensions. The masks were produced by an electron beam lithography, metal deposition and metal lift-off sequence. 10 keV 75As+-ions were implanted to a fluence of 2.5—1014 cm-2 to create nanometer-sized doped and undoped volumes. Characterisation of the ion-implanted patterns was carried out by etching away the metal masks and subsequently using atomic force microscopy (AFM) and scanning capacitance microscopy (SCM) images of the patterns. The simultaneous AFM and SCM measurements gave sharp contrasts between implanted and unimplanted regions, showing highly resistive swelled structures. The swelling also showed structure with a concave shape for implanted regions and a convex shape for unimplanted regions, which is most probably a result of damage evolution from the implantation.
Host/Issue Nuclear instruments & methods in physics research Section B
ISSN 0168-583X
Pages 173
447-454
Language eng (iso)
Subject(s) Low energy ion implantation
Nanometer structures
SCM
AFM
Handle http://hdl.handle.net/2043/547 (link to this page)
Link http://dx.doi.org/10.1016/S0168-583X(00)00416-X (external link to related web page)

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