Annealing of Low Resistivity Co-silicides formed by MEVVA Implantation into SiO2/Si and Si3N4/Si Structures

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Annealing of Low Resistivity Co-silicides formed by MEVVA Implantation into SiO2/Si and Si3N4/Si Structures

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Publication Article, peer reviewed scientific
Title Annealing of Low Resistivity Co-silicides formed by MEVVA Implantation into SiO2/Si and Si3N4/Si Structures
Author(s) Zhang, Y ; Lu, D-T ; Zhang, T ; Maximov, I A ; Sarwe, E-L ; Graczyk, M ; Whitlow, Harry J
Date 2001
DOI http://dx.doi.org/10.1016/S0168-583X(00)00658-3 (link to publisher's fulltext)
Host/Issue Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Volume 175-177
ISSN 0168-583X
Pages 737–743
Language eng (iso)
Handle http://hdl.handle.net/2043/550 (link to this page)

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