Sputtering transients for some transition elements during high-fluence MEVVA implantation of Si

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Sputtering transients for some transition elements during high-fluence MEVVA implantation of Si

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Publication Article, peer reviewed scientific
Title Sputtering transients for some transition elements during high-fluence MEVVA implantation of Si
Author(s) Zhang, Y ; Whitlow, Harry J ; Xiao, Z ; Zhang, T
Date 2001
English abstract
The approach to quasi equilibrium sputtering of transition elements Co, Er, V and Ni during high-fluence implantation of Si(1 1 1) using a metal vapour vacuum arc (MEVVA) source has been studied by time of flight-energy elastic recoil detection analysis (ToF-E ERDA) and scanning electron microscopy (SEM). The partial sputter yield of the implanted species was determined from the change in the content of the implanted species with the implanted ion fluence. The partial sputter yield of Co exhibits a step-like rise to ~0.4 that might be associated with a rapid segregation of Co to the surface followed by a slow exponential-like increase. Er on the other hand follows an exponential approach to the quasi-equilibrium partial sputtering yield which is indicative of no strong buildup of Er within the sputter escape depth. Additional data for Ni and V suggest also an exponential approach to quasi-equilibrium sputtering.
DOI http://dx.doi.org/10.1016/S0168-583X(00)00430-4 (link to publisher's fulltext)
Host/Issue Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;4
Volume 173
ISSN 0168-583X
Pages 427-435
Language eng (iso)
Subject(s) Sputtering transients
ToF-E ERDA
MEVVA
Silicide
Transition elements
Handle http://hdl.handle.net/2043/555 (link to this page)
Link http://dx.doi.org/10.1016/S0168-583X(00)00430-4 (external link to related web page)

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