High-dose Co implantation in Si, SiO2/Si and Si3N4/Si Part I: Formation of thin silicide surface films

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High-dose Co implantation in Si, SiO2/Si and Si3N4/Si Part I: Formation of thin silicide surface films

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Publication Article, peer reviewed scientific
Title High-dose Co implantation in Si, SiO2/Si and Si3N4/Si Part I: Formation of thin silicide surface films
Author(s) Zhang, Y ; Winzell, T ; Zhang, T ; Maximov, I A ; Sarwe, E-L ; Graczyk, M ; Montelius, L ; Whitlow, Harry J
Date 1999
English abstract
In order to obtain thin CoSi2 surface layers, Si(1 1 1) and Si(1 0 0), covered by SiO2 or Si3N4 with different thickness, have been implanted by Co to normal fluences from 1 x 1016 to 2.6 x 1018 ions cm-2. The Co ions were produced by a high beam current MEtal Vapour Vacuum Arc (MEVVA) ion implantation system with 40 kV acceleration voltage. Time-of-Flight Energy Elastic Recoil Detection (ToF-E ERD) was used to determine the incorporation of Co in the coating materials and silicon substrates. The phase formation and electrical characterisation have been studied by X-ray diffraction (XRD) and a four-point probe system. The results reveal that the oxide and nitride layers are uniformly eroded and no significant N or O transport into the bulk Si is observed. After implantation, a thin surface silicide layer (~80 nm) with both a smooth surface topography and sharp interface could be obtained. The optimum Co normal fluence for producing a flat silicide layer depends on the surface film material and its thickness.
DOI http://dx.doi.org/10.1016/S0168-583X(99)00550-9 (link to publisher's fulltext)
Host/Issue Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;3
Volume 159
ISSN 0168-583X
Pages 142-157
Language eng (iso)
Subject(s) Silicide
Silicon
Si3N4
SiO2
ToF-E ERD
Synthesis
Normal fluence
MEVVA ion source
Handle http://hdl.handle.net/2043/584 (link to this page)

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