High-dose Co implantation in Si, SiO2/Si and Si3N4/Si Part II: Sputtering yield transients, the approach to high-fluence equilibrium

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High-dose Co implantation in Si, SiO2/Si and Si3N4/Si Part II: Sputtering yield transients, the approach to high-fluence equilibrium

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Publication Article, peer reviewed scientific
Title High-dose Co implantation in Si, SiO2/Si and Si3N4/Si Part II: Sputtering yield transients, the approach to high-fluence equilibrium
Author(s) Zhang, Y ; Winzell, T ; Zhang, T ; Maximov, I A ; Sarwe, E-L ; Graczyk, M ; Montelius , L ; Whitlow, Harry J
Date 2003
English abstract
The partial sputtering yields of different species from silicon dioxide/Si and silicon nitride/Si during high-fluence keV Co Metal Vapour Vacuum Arc (MEVVA) irradiation are of importance for both silicide formation and interpretation of sputter profiling. Three sets of samples, nitride/Si(1 0 0), oxide/Si(1 0 0) and oxide/Si(1 1 1), have been bombarded to different normal fluences, , from 1 × 1016 to 2.6 × 1018 ions cm-2. The partial sputtering yields for N and Si in the thick nitride films are ~1.0 and ~0.65, respectively, which indicates that the relative sputtering ratio of N/Si is ~1.5. The partial sputtering yields for O and Si of oxide/Si(1 0 0) samples are determined as ~1.0 and ~0.3, respectively. Although the O and Si sputtering yields from oxide/Si(1 1 1) samples are ~15% higher, the average sputtering ratio of O/Si is ~3.4, the same for both sets of oxide/Si samples. As expected, the partial sputtering yield of Co, YCo(), is small for low fluence implantation and increases with increasing Co fluence. At a normal fluence of ~5 × 1017 ions cm-2, YCo() reaches the high fluence quasi-equilibrium limit, the value is very close to unity. The sputtering yield of Co reduces slightly at even higher fluences, which is associated with erosion of the sample surface.
Host/Issue Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;3
Volume 159
ISSN 0168-583X
Pages 133-141
Language eng (iso)
Subject(s) Sputtering yield
Nitride
Oxide
Silicon
ToF-E ERD
High fluence equilibrium
Transients
Handle http://hdl.handle.net/2043/585 (link to this page)
Link http://dx.doi.org/10.1016/S0168-583X(99)00538-8 (external link to related web page)

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